1,350V IGBT reduces losses in domestic appliances, says Toshiba
A discrete 1,350V insulated gate bipolar transistor (IGBT) from Toshiba is designed for use in resonance-based home appliance applications that use induction heating (e.g. tabletop cookers, rice cookers and microwave ovens).
The GT20N135SRA IGBT features a collector-emitter saturation voltage (VCE(sat)) of 1.6V (typical) and a diode forward voltage (VF) of 1.75V, which represent reductions of around 10 and 21 per cent respectively when compared with conventional products, reports Toshiba.
Maximum junction-to-case thermal resistance (Rth(j-c)) of 0.48 degrees per W facilitates thermal design with less heatsinking as it represents an approximate 26 per cent reduction from existing products, the company says.
The GT20N135SRA can suppress the short circuit current through a resonance capacitor that is generated when the device is started. The peak short circuit current is 129A, almost a third lower than existing products. The safe operating area (SOA) is widened, meaning that the IGBT is less likely to break down.
Housed in an industry standard TO-247 package, the GT20N135SRA is able to handle a maximum collector current (IC) of 40A, reducing with derating to 20A at 100 degrees C.
Toshiba is shipping the GT20N135SRA IGBT now.
Toshiba Electronics Europe (TEE) is the European electronic components business of Toshiba Electronic Devices and Storage. TEE offers European consumers and businesses a variety of hard disk drive (HDD) products plus semiconductors for automotive, industrial, IoT, motion control, telecomms, networking, consumer and white goods applications. The company’s broad portfolio encompasses integrated wireless ICs, power semiconductors, microcontrollers, optical semiconductors, ASSPs and discrete devices ranging from diodes to logic ICs.
TEE has headquarters in Düsseldorf, Germany, with branch offices in France, Italy, Spain, Sweden and the United Kingdom providing design, manufacturing, marketing and sales.