1,500W RF power transistor reduces amplifier size

Richardson RFPD offers the MRF1K50H, LDMOS transistor from NXP. The 1.8 to 500MHz, 50V transistor delivers 1,500W CW at 50V, is rugged and offers what the company says is superior thermal performance. According to the company, it can reduce the number of transistors in high power RF amplifiers, to decrease amplifier size and bill of materials.

It operates up to 500MHz for a range of applications, from laser and plasma sources to particle accelerators, industrial welding machines, radio and VHF TV broadcast transmitters, and amateur radio linear amplifiers.

Features include a high drain-source avalanche energy absorption capability and what the company claims is unmatched I/O to allow for a wide frequency range. It is versatile, offered for singled-ended use or push-pull configuration and is characterised from 30 to 50V for ease of use.



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