2.38mOhm MOSFET offers battery protection

The AOC3862 is a common-drain, 12V, dual n-channel MOSFET with a low on-resistance, typical 2.38mOhm at 4.5V gate drive. It is claimed to offer best-in-class source-to-source on-resistance (Rss on), for the lowest voltage drop and temperature rise in the protection circuit module.

As part of the AlphaDFN family, it has backside protection which allows it to be reliably mounted onto the PCB.

It is suitable for the protection circuit in high capacity battery packs, which are used in almost all new smartphones. In the design of smartphone battery packs, two technical factors have changed the protection circuit design. Firstly, a higher charging current is applied to charge the battery in a shorter time, secondly, designers are using as much space as possible to fit in more-active battery cells. As a result, board designers have to control the temperature rise to a minimum level within a tighter board space. This MOSFET has typically 2.38mOhm Rss at 4.5V gate drive and 2.5mOhm at 3.8V gate drive. This is due to the reduction of both channel resistance and distribution resistance.

It is offered in a 3.55 x 1.77mm AlphaDFN package.

http://www.aosmd.com

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