40V and 60V MOSFETs are based on Toshiba’s U-MOS-IX-H process

Based on the latest generation of trench process, 40 and 60V U-MOS-IX-H MOSFETs are offered by Toshiba Electronics Europe in a DPAK package offering low RDS(ON) down to 3.1mΩ, says the company. 

The TK3R1P04PL, TK4R4P06PL and TK6R7P06PL N-channel MOSFETs can be driven by 4.5V logic levels and offer low maximum on resistance (RDS(ON)) ratings down to 3.1mOhm (at VGS of 10V).

They are supplied in compact DPAK packaging, making them suitable for high-efficiency power conversion applications including AC/DC and DC/DC converters, power supplies and motor drives.

The TK3R1P04PL is a 40V MOSFET with a maximum RDS(ON) of 3.1mOhm and a maximum drain current rating of 58A (at a temperature of 25 degree C). The 60V TK4R4P06PL and TK6R7P06PL have respective maximum RDS(ON) and ID ratings of 4.4mOhm and 58A and 6.7mOhm and 46A.

All of the MOSFETs are designed to operate with a low output charge to further optimise efficiency and performance.

Toshiba Electronics Europe (TEE) is the European electronic components business of Toshiba Electronic Devices and Storage Corporation. TEE offers a variety of innovative hard disk drive (HDD) products and semiconductors for automotive, industrial, IoT, motion control, telecomms, networking, consumer and white goods applications. Its portfolio encompasses integrated wireless ICs, power semiconductors, microcontrollers, optical semiconductors, ASICs, ASSPs and discrete devices ranging from diodes to logic ICs.

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http://www.toshiba.semicon-storage.com

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