40V, N-channel power MOSFET uses U-MOSIX-H to reduce EMI
A low spoke capability in the TPHR7404PU 40V, N-channel MOSFET reduces overshoot in switching applications, says Toshiba Electronics Europe. The MOSFET uses the latest generation U-MOSIX-H process and the low-spike capability reduces EMI, makes it suitable for secondary synchronous rectification in switching power supply applications. At the same time, the MOSFET maintains a low on resistance of 0.74 mOhm (max) at a gate source voltage (Vgs) of 10V. A gate threshold voltage of 2.0 to 3.0V (Id =1mA) will help to avoid unintended turn on, for example, in battery-powered tools, advised Toshiba.
The TPHR7404PU features a new cell structure, using a parasitic snubber, which limits noise and ringing during switching. As a result, peak voltage when switching is lower as is the signal ringing.
Available in a small 5.0 x 6.0mm SOP Advance package and with a low channel-to-case thermal resistance of 0.71 degrees C per W, the MOSFET is suitable for efficiency-focused, compact power solutions. Typical applications for the MOSFET are high efficiency DC/DC converters, motor drivers, and switching voltage regulators.
Toshiba Electronics Europe (TEE) is the European electronic components business of Toshiba Electronic Devices and Storage. TEE offers a wide variety of hard disk drive (HDD) products and semiconductors for automotive, industrial, IoT, motion control, telecomms, networking, consumer and white goods applications. The company’s portfolio encompasses power semiconductors and other discrete devices ranging from diodes to logic ICs, optical semiconductors as well as microcontrollers and application specific standard products (ASSPs).
TEE has headquarters in Düsseldorf, Germany, with branch offices in France, Italy, Spain, Sweden and the United Kingdom providing marketing, sales and logistics services.
