Automotive MOSFETs boost noise performance and efficiency

Using the latest STripFET F7 technology, the STL140N4F7AG and STL190N4F7AG 40V MOSFETs from STMicroelectronics are claimed to combine switching performance and energy efficiency with very low emitted noise and high immunity to false turn-on.

They can be used for applications with current ratings up to 120A, such as high-current powertrain, body, or chassis and safety systems. The switching characteristics make them suited to use in motor drives such as in electric power steering.

The automotive-qualified STripFET families use DeepGate technology to achieve low RDS(on) per die area and low RDS(on) x gate charge (Qg), for energy efficiency in familiar power packages. High avalanche ruggedness is another feature.

The technology enhances switching performance and maximises energy efficiency by lowering the body-diode reverse-recovery charge (Qrr) and reverse-recovery time (trr), while softer recovery minimises EMI easing demand for filtering components. In addition, optimised device capacitances increase noise immunity, relieving the need for snubber circuitry, and threshold-voltage tuning ensures high false turn-on immunity without requiring a dedicated gate driver. In bridge circuits like motor drives, the soft diode recovery helps prevent shoot-through currents enhancing reliability.

The devices are qualified to AEC-Q101 in the PowerFLAT 5×6 package with wettable flanks. The compact footprint and 0.8mm profile enable high system power density, while the flank design aids solder-joint reliability and lifetime as well as allowing 100% automatic optical inspection.

http://www.st.com/stripfetf7

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