Compact DC/DC converter can drive SiC MOSFETs
High and low-side gate circuits, such as those using IGBTs and SiC MOSFETs, can be driven by a compact DC/DC converter from Murata.
The MGJ1 1Watt converter has high isolation characteristics, up to 5.2kV DC, and nominal output voltage combinations of +15/-5, +15/-9 or +19/-5V DC. The series offers a choice of +5, +12 or +24V DC input.
High dV/dt immunity helps reliable and continued operation in fast switching circuits, says the company. This is coupled with partial discharge performance for a long service life. The low input-to-output coupling capacitance, typically 5pF, assist in reducing the affects of EMI.
The converter conforms to the UL 60950 (pending) for reinforced insulation. Certification to ANSI/AAMI ES60601-1 to 2 MOOPs is pending.