Demonstration boards can reduce time to market in hi-rel applications
Demonstration boards to evaluate radiation-hardened GaN power devices have been introduced by EPC Space for high-reliability and aerospace applications.
The family of demonstration boards is described as easy to use, to help designers quickly and easily implement radiation hardened (RH) GaN power devices.
Included in the family are three low-side driver demo boards – the EPC7C001, EPC7C002 and EPC7C003, which use EPC Space’s eGaN gate driver modules to drive a corresponding 40V, 100V, or 200V discrete eGaN FET. Also included is the EPC7C005 demonstration board. This allows developers to evaluate the switching operation and conversion efficiency performance of the FBS-GAM02-P-C50 rad-hard power module connected as a half-bridge point-of-load (PoL) output stage. Finally, the EPC7C006 is a three-phase motor demonstration board that uses the FBS-GAM02-P-R50 module.
“Radiation-hardened eGaN FETs and ICs offer designers improved performance, lower cost, and shorter delivery times compared to RH silicon-based devices,” said Bel Lazar, CEO of EPC Space. The easy-to-use evaluation platform can assist designers looking to convert their RH silicon designs to take advantage of the higher power densities, higher efficiencies, and better cost and delivery that GaN offers,” he added.
EPC Space EPC Space provides high-reliability, radiation-hardened enhancement-mode gallium nitride (eGaN) power management for space and other harsh environments. Radiation-hardened GaN-based power devices address critical spaceborne environments for applications including power supplies, light detection and ranging (lidar), motor drive and ion thrusters.
