Development board demonstrates FET capability for LiDAR in autonomous cars
Designed to demonstrate the transition capability of eGaN FETs compared to MOSFETs in LiDAR systems, Efficient Power Conversion (EPC) has introduced the EPC9126. The 100V, high current pulsed laser diode driver evaluation board features eGaN FETs that can drive laser diodes with high current pulses and total pulse widths as low as 5ns. These parameters enhance the quality of information a LiDAR system will detect, including the accuracy, precision, and processing speed, essential for autonomous vehicles, where speed and accuracy in detection objects is critical.
Accoding to the company, the board shows the rapid transition capability of eGaN FETs to power pulses to drive the laser up to 10 times faster than an equivalent MOSFET. The EPC9126 development board is primarily intended to drive laser diodes and features an EPC2016C ground-referenced eGaN FET driven by a Texas Instruments UCC27611 gate driver.
The board can accommodate an EPC2001C 100V eGaN FET with a pulse current rating of up to 150A. The board includes multiple ultra-low inductance connection options for mounting laser diodes and can drive these via a discharging a capacitor (as shipped) or directly from a power bus. The board does not include a laser diode, which must be supplied by the user, to evaluate specific applications. The PCB minimises the power loop inductance while maintaining mounting flexibility for the laser diode, says the company. It includes multiple on-board passive probes for voltages and discharge capacitor current measurement, and is equipped with SMA connections for input and sensing designed for 50Ohm measurement systems. In addition, the user can enable an optional precision narrow pulse generator.
The board can also be used for other applications requiring a ground-referenced eGaN FET, for example in Class E or similar circuits.
The EPC9126 100V high current pulsed laser diode driver evaluation board is available from distributor, Digi-Key.