eGaN technology raises performance, says Efficient Power Conversion (EPC)

eGaN technology raises performance, says Efficient Power Conversion (EPC): Efficient Power Conversion (EPC) has introduced the EPC2045 and EPC2047 eGaN FETs that are half the size of earlier generation eGaN transistors with significantly higher performance, says the company.

The EPC2045 (7mOhm, 100V) and the EPC2047 (10mOhm, 200V) eGaN have been announced by the company. The EPC2045 is suitable for designs from single stage 48V to load open rack server architectures, point-of-load (PoL) converters, USB-C, and LiDAR applications.

Wireless charging, multi-level AC-DC power supplies, robotics, and solar micro inverters are example applications for the 200V EPC2047 FET.

According to EPC, the FETs widen the performance/cost gap with equivalent silicon power transistors. The 100V, 7mOhm EPC2045 cuts the die size in half compared to the prior-generation EPC2001C eGaN FET. The 200V, 10mOhm EPC2047 eGaN FET also cuts the size in half, so that it is now about 15 times smaller than equivalently rated silicon MOSFETs.

Designers no longer have to choose between size and performance, says EPC, they can have both. The chipscale packaging of eGaN products handles thermal conditions better than the plastic packaged MOSFETs, since the heat is dissipated directly to the environment with chip-scale devices. The heat from the MOSFET die is held within a plastic package.

These eGaN FETs demonstrate how the gallium nitride (GaN) transistor technology is increasing the performance and reducing the cost of eGaN devices for applications currently being served by MOSFETs, says EPC. Further, advancements in the company’s GaN technology will continue to enable new end-use applications that go beyond the capability of silicon devices, promises EPC.

There are three development boards available to support easy in-circuit performance evaluation of the EPC2045 and the EPC2047 respectively.  The EPC9078 and EPC9080 support the 100V EPC2045, whereas the EPC9081 features the 200V EPC2047.

A particular feature of GaN process devices is that they have significantly lower capacitance than their silicon counterparts. This translates into lower gate drive losses and lower device switching losses at higher frequencies for the same on-resistance and voltage rating. In the case of the EPC2045, a 30 per cent reduction in power loss with a 2.5 percentage points better efficiency than the best comparable MOSFET was achieved in a 48 to 5.0V circuit operating at 500kHz switching frequency. In contrast to silicon MOSFETs, the switching performance of eGaN FETs improves even though they are significantly smaller, says EPC. The performance, size, and cost improvement are due to the method used by EPC of both reducing the electric fields in the drain region during breakdown, and significantly reducing the number of traps that could cause electrons to become inactive. 

eGaN technology raises performance, says Efficient Power Conversion (EPC):

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