EPC shrinks FET to save space in data centre servers and motor drives
To save space in high performance, space-constrained applications, EPC has developed the 40V, 1.1 mOhm (0.8 mOhm typical) EPC2066 GaN FET, which is “significantly smaller and more efficient” than silicon MOSFETs, claimed the company.
The low losses and small size of the EPC2066 makes it a suitable switch for the secondary side of high power density 40 to 60V to 12V DC/DC converters for the latest servers and artificial intelligence. It is also suitable for the secondary side synchronous rectification to 12V in power supply and silver box data centre servers and for high density motor drive applications from 24 to 32V. The high frequency operation, high efficiency and a small 13.9 mm2 footprint of the GaN FET combine for state-of-the-art power density.
The EPC2066 is footprint compatible with EPC’s Generation 4 EPC2024. The Generation 5 improvement in area x RDS(on) gives the EPC2066 a 27 per cent reduction in on-resistance in the same area.
“The EPC2066 is significantly smaller than any other FET in the market at this on resistance”, said Alex Lidow, EPC’s co-founder and CEO. The EPC2066 complements the EPC2071 for LLC DC/DC for high power density computing applications, he added.
EPC has also produced the EPC9174 reference design board. It is a 1.2kW, 48V input to 12V output LLC converter. It features the EPC2071 for the primary side full bridge and the EPC2066 on the secondary side. The GaN FETs enable 1.0MHz switching frequency and 1.2kW of power in a small 22.9 x 58.4 x 10mm size (power density 1472W/in3). The peak efficiency is 97.3 per cent at 550W and the full load efficiency of 96.3 per cent at 12 V, delivering 100A output.
The EPC2066 eGaN FET and EPC9174 demonstration board are available for immediate delivery from Digi-Key.
Designers interested in replacing silicon MOSFETs with a GaN device can use the EPC GaN Power Bench’s cross-reference tool to find a suggested replacement based on the specific operating conditions. The cross-reference tool can be found at the EPC website.
EPC specialises in enhancement mode GaN-based power management. eGaN FETs and ICs can replace silicon power MOSFETs in applications such as DC/DC converters, remote sensing technology (lidar), motor drives for e-Mobility, robotics, and drones, and low-cost satellites.
