EPC2046 GaN power transistor is x12 smaller than equivalently rated MOSFET

The EPC2046 Gallium Nitride (GaN) power transistor is a 200V, 25-mOhm power transistor that is approximately 12 times smaller than equivalently rated silicon meal-oxide semiconductor field effect transistors (MOSFETs), claims Efficient Power Conversion (SPC).

System designers can use the EPC2046 for wireless power, multi-level AC/DC power supplies, robotics, solar micro inverters and low inductance motor drives.

The EPC2046 has a voltage rating of 200V and maximum RDS(ON) of 25-mOhm with a 55A pulsed output current. The chip-scale packaging of the EPC2046 handles thermal conditions far better than the plastic packaged MOSFETs, claims EPC, as the heat is dissipated directly to the environment; the heat from the MOSFET die is held within a plastic package.

The EPC2046 measures just 0.95 mm x 2.76mm (2.62mm²). EPC says this introduction means that designers no longer have to choose between size and performance – they can have both. “Manufactured using our latest fifth-generation process, the EPC2046 demonstrates how EPC and GaN transistor technology is increasing the performance and reducing the cost of eGaN devices, says Alex Lidow, co-founder and CEO of EPC. He believes the EPC2046 opens up new applications beyond the reach of the silicon MOSFET, while offering an incentive for users of MOSFETs in existing applications to switch. “[The EPC2046] is further evidence that the performance and cost gap of eGaN technology with MOSFET technology continues to widen,” he adds. 

EPC also offers the EPC9079 development board. The board is a 200V maximum device voltage, half bridge with on-board gate driver, featuring the EPC2046, on-board gate drive supply and bypass capacitors. It measures 2.0 x 1.5inch (50 x 38mm) board has been laid out for optimal switching performance to evaluate the 200V EPC2046 eGaN FET.

Both the EPC2046 GaN transistor and the EPC9079 development board are available for immediate delivery from distributor, Digi-Key.



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