Gate driver IC boasts industry leading low power consumption

The 1EDN EiceDriver family of one-channel, low-side gate driver ICs can drive MOSFETs, IGBTs as well as GaN power devices. Its pin-out and packages are compatible to the industry standard to be drop-in replacement for existing designs, says Infineon.

Target applications are telecomms and industrial SMPS, DC/DC converters, PFC in EV charging stations as well as industrial applications such as AC power tools, UPS, air conditioning and fans. They also support wireless charging applications.

Compared to other one-channel, low-side gate driver ICs, the 1EDN EiceDriver has low Ohmic output stages for higher efficiency of more than 30 per cent. 

The outputs of the 1EDN family have an industry-leading reverse current robustness of 5A, says the company. According to the company, this eliminates the need for protection diodes when driving MOSFETs with large parasitic source inductances typically found in TO-220 or TO-247 packages. This allows customers to save both bill of materials and PCB area, says the company.

The 1EDN portfolio excels by its -10V input robustness securing a crucial safety margin against ground-shifts when driving gate-transformers. Noise robustness protects against electrical overstress of the inputs or latch-up of the driver IC. Variants include separate source and sink output terminals, for turn-on and turn-off speed optimisation, concurrently saving one external diode.


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