Gate-driver IC promises “unprecedented power density”
Designed to counter false triggering of the gate driver IC in low-voltage power conversion systems, Infineon Technologies has introduced the EiceDriver 1Edn with TDI (truly differential inputs). This cost-effective, compact IC has been created because each time a power MOSFET is being turned on or off in a switch mode power supply, parasitic inductances produce ground-shifts that may cause false triggering of the gate driver IC. The EiceDriver 1EDN TDI one-channel gate driver is housed in a six-pin leadless TSNP, measuring 1.5 x 1.1 x 0.39mm.
Infineon says its gate driver ICs with TDIs are key to high-power-density and high-efficiency designs at a lower system cost compared to alternative solutions.
The TSNP package (1EDN7550U) occupies a PCB area that is five times smaller than its SOT-23 family members. It has a 3.3V PWM input signal at application level, enabling it to withstand static ground-shifts of up to ±70V and transient ground shifts of up to ±150V peak. The size and ground-shift robustness enables two gate driver ICs to operate in a 48V half-bridge configuration, enabling them to be placed wherever they fit best on the PCB layout; this quality is key to enabling industry leading power density, says Infineon.
The EiceDriver 1EDN7550U, in leadless TSNP package, enables 25 and 40V OptiMOS MOSFETs to operate in switched capacitor topologies at 1.2MHz switching frequency. In this application, a high power density of 3,060W per inch3 and a 97.1 per cent peak efficiency (including auxiliary losses) have proved possible.
The EiceDriver 1EDN TDI family is available now in the six-pin TSNP and the previously available standard SOT-23 six-pin package.
