HEMTs offer wide range for high efficiency
Distributor Mouser is now shipping Qorvo’s QPD GaN high-electron-mobility transistors (HEMTs) with a single-stage matched power amplifier transistor and a wide array of frequency ranges, output power, and operating voltages for high-efficiency applications.
SiC GaN technology supports RF power densities between five and six times higher than gallium arsenide-based RF amplifiers, says the company. This enables them to be used for infrastructure, defence and aerospace applications such as radar, electronic warfare, communications, navigation, and similar applications. The increase in performance capability can reduce board space and system costs while improving system performance, says the company.
The transistors available from Mouser Electronics include the recently released QPD1003, the industry’s first 500W, L-Band power amplifier internally matched to 50 ohms. It meets the performance needs of high-power phased arrays such as active electronic scanned array (AESA) radars, which operate in the 1.2 to 1.4GHz frequency range. Systems require power amplifiers that operate at maximum efficiency resulting in low heat generation in demanding environmental conditions, says the company.