High-speed mobile SDRAMs extend battery life in mobile devices
Two high-speed CMOS mobile synchronous DRAMs (MSDR) have been designed by Alliance Memory to extend battery life in mobile devices.
The 512Mbit AS4C32M16MS and AS4C16M32MS have a low power consumption of 1.8V and are offered in 8.0 x 9.0mm 54-ball and 8.0 x 13.0mm 90-ball FPBGA packages.
The MSDRs feature auto-temperature-compensated self-refresh (TCSR) to minimise power consumption at lower ambient temperatures. The partial-array self-refresh (PASR) feature reduces power by only refreshing critical data, while a deep power down (DPD) mode provides a low power state when data retention is not required.
The devices provide drop-in, pin-for-pin-compatible replacements for high-bandwidth, high-performance memory system applications in portable consumer electronics, medical equipment, and networking and telecommunications devices.
The AS4C32M16MS and AS4C16M32MS are internally configured as four banks x 8Mbit x 16 and four banks x 4Mbit x 32, respectively, and offer high-speed operation with clock rates up to 166MHz. For use in extreme environments, the devices are available in both extended commercial (-25 to +85°C) and industrial (-40 to +85°C) temperature ranges.
They offer synchronous operation and provide programmable read or write burst lengths of one, two, four or eight. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Refresh can be auto- or self-refresh.