High-voltage drive transistor arrays are compact

Transistor arrays with a DMOS FET type sink output are announced by Toshiba. The TBD62183AFNG and TBD62183AFWG are for level shift applications and for directly controlling photocouplers, LEDs, and relays that require high-voltage input signals.

 They deliver high-voltage drive capabilities with an input rating of 30V and output rating of 50V. An eight-channel sink type output is incorporated into the surface mount packages, to reduce the component count of multiple circuits.

 The TBD62083A-series has an IOUT of 500mA/channel while the TBD2183A-series is designed for low power applications with a maximum IOUT of 50mA/channel.

 By adopting a DMOS FET type output, the two arrays eliminate the need for a base current for the input pin. Operation is with a low maximum input current of 0.1mA at VIN of 3V, while delivering low power consumption. They also have output characteristics similar to the Vce (sat) properties of a Darlington bipolar transistor, making them suitable for replacing in-line bipolar transistors in the company’s TD62083A series.

 The TBD62183AFNG is housed in an SSOP18 package and the TBD62183AFWG is in a SOL18 package.

http://www.toshiba.semicon-storage.com

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