IMS-Based evaluation platform develops high-efficiency power systems
Now available from Mouser, the GSP65RxxHB-EVB insulated metal substrate (IMS)-based evaluation platform from GaN Systems is for developing high-efficiency power systems.
The IMS evaluation platform demonstrates an inexpensive way to improve heat transfer, increase power density, and reduce system cost of power systems in automotive, consumer, industrial, and server or data centre applications.
The GaN Systems’ GSP65RxxHB-EVB IMS-based evaluation platform consists of the GSP65MB-EVB motherboard and two IMS evaluation modules that each includes a high power, bottom side-cooled GS66516B enhancement mode high electron mobility transistor (E-HEMT) by GaN Systems. The 650V IMS evaluation modules are configured as a half bridge and are available in 13-mOhm, two to 4.0kW and 25-mOhm, four to 7.0kW variants.
Together, the motherboard and IMS evaluation modules enable a total of 10 configurations, with two additional configurations possible when using a second motherboard. Designers can also use the IMS evaluation modules independently as a high-power gallium nitride (GaN) intelligent power module (IPM) with their own boards for in-system prototyping.
The evaluation modules offer very low inductance and feature an optimised driver board that minimises both the power and gate driver loops. Typical applications include on-board chargers, DC/DC converters and three-phase inverters for electric and hybrid vehicles, industrial photovoltaic inverters and motor drives, switch mode power supplies for server/data centres and residential energy storage systems.
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