Infineon announces MOSFETs in PQFN package for wireless charging
Infineon Technologies introduces a new logic level IR MOSFET (metal-oxide semiconductor field-effect transistor) family.
The family is made up of three different voltage classes, 60, 80, and 100V. The three devices are available in a 2.0 x 2.0mm PQFN package which is suitable for form-factor-critical wireless charging, adapter, and telecomms applications.
The small package size enables higher power density and improved efficiency, says Infineon. At the same time it saves space, reduces parts count, and reduces overall system cost.
The IR MOSFET devices in the PQFN package deliver between 11 and 40 per cent lower RDS(on) than competitive products, says the company. The low gate charge (Qg) reduces switching losses without increasing conduction losses. In addition, the output capacitance (C OSS) and reverse recovery charge (Qrr) have been optimised, the FOMg (RDS(on) x Q g/gd) has been improved, compared to earlier offerings. This allows the IR MOSFET devices to operate at high switching frequencies of up to 6.78MHz, a frequency required in resonant wireless charging applications. The logic level gate drive provides a low gate threshold voltage (V GS(th)) which means that the MOSFETs can be driven at 5.0V and directly from microcontrollers.
The IR MOSFET family is available now in 60 and 80V variations, with a 100V device also in development.
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