Infineon extends IGBT portfolio to 75A with TO-247Plus packages

Infineon Technologies expands its 1200V discrete insulated gate bipolar transistor (IGBT) product portfolio by offering up to 75A. The devices are co-packed with a full rated diode in a TO-247Plus package. The TO-247Plus three- and four-pin packages serve the growing demand for higher power density and highest efficiency in discrete packages, says Infineon. Typical applications with a blocking voltage of 1200V requiring high power density are drives, photovoltaic, and uninterruptible power supplies (UPS), as well as battery charging and energy storage systems. 

Compared to a regular TO-247-3 package, the new TO-247Plus package can provide double current rating, claims Infineon. Due to the removal of the screw hole from the standard TO-247 package, it has a larger lead frame area and thus can accommodate bigger IGBT chips. Now, up to 75A 1200V co-packed IGBTs with the same small footprint are available for the first time. The larger lead frame provides a lower thermal resistance of the TO-247Plus package, leading to an improved heat dissipation capability, explains Infineon.

For designers looking to improve the switching losses, the TO-247Plus four-pin package features an extra Kelvin emitter source pin. This allows for an ultra-low inductance gate-emitter control loop and reduces the total switching losses E (ts) by more than 20 per cent. The 1200V IGBTs in TO-247Plus three- and four-pin packages can be used to increase the system power density. They can also be used to reduce the number of power devices used in parallel, increase system efficiency or improve system thermal conditions.

The 1200V IGBT in TO-247Plus three-pin and TO-247Plus four-pin are available in high volume. The complete product portfolio available from Infineon comprises 40, 50, and 75A IGBT co-packed with a full current freewheeling diode.

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http://www.infineon.com

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