Infineon offers CoolSiC MOSFETs in D²PAK for low loss in e-mobility
The increase in e-mobility and digitalisation of products is leading to an increase in power consumption, said Infineon. In response, it has introduced a family of CoolSiC 650V SiC MOSFETs which build on its SiC trench technology. The CoolSiC MOSFETs 650 V are offered in a compact D 2PAK SMD seven-pin package with .XT interconnection technology.
Target high power applications include servers, telecomms, industrial switch mode power supplies (SMPS), fast electric vehicle (EV) charging, motor drives, solar energy systems, energy storage and battery formation, advised Infineon.
The MOSFETs offer improved switching behaviour at higher currents and 80 per cent lower reverse recovery charge (Q rr) and drain-source charge (Q oss) than the best silicon reference, claimed Infineon. The reduced switching losses allow high-frequency operations in smaller system sizes, enabling higher efficiency and power density.
The trench technology is the basis for gate oxide reliability performance, said the company. Together with an improved avalanche and short-circuit robustness this is claimed to ensure high system reliability even in harsh environments. The SiC MOSFETs are suitable for topologies with repetitive hard commutation as well as for high temperature and harsh operations. The low on-resistance (RDS(on)) dependency with temperature contributes to thermal behaviour.
The MOSFETs also feature a wide voltage from gate to source (V GS) range from -5.0 to +23V and support 0V turn-off V GS and a gate source threshold voltage (V GS(th)) greater than 4.0V. These characteristics ensure the MOSFETs also work with standard MOSFET gate driver ICs. Additionally, they support bi-directional topologies and full dv/dt controllability, offering reduced system cost and complexity, as well as ease of adoption and integration, added Infineon.
The .XT interconnection technology is claimed to significantly improve the package’s thermal capabilities. Up to 30 per cent extra loss can be dissipated compared to a standard interconnection. There are 10 new products in the Infineon D 2PAK seven-pin portfolio of SiC MOSFETs.
The CoolSiC MOSFETs 650V in D 2PAK seven-pin (TO-263-7) are available for order now.
