Microchip adds topologies to its SiC offering
Dual diode, full bridge, phase leg, dual common cathode and three-phase bridge topologies SiC power modules have been added to Microchip’s silicon carbide (SiC) family.
Microchip offers commercially-qualified Schottky barrier diode (SBD)-based power modules in 700, 1200 and 1700V variants. The new power modules are offered in a range of current and package options. The addition of SiC SBD modules simplifies designs by integrating multiple SiC diode die with the option to mix and match substrate and baseplate material into a single module, explains Microchip. This maximises switching efficiency, reduces thermal rise and allows for a smaller system footprint.
The 700, 1200 and 1700V SiC SBD modules use Microchip’s newest generation of SiC die, which maximises system reliability and ruggedness and enables stable and lasting application life. The devices’ high avalanche performance allows system designers to reduce the need for snubber circuits and the body diode stability allows designs to use the internal body diode without long-term degradation.
Microchip also offers 30kW three-phase Vienna power factor correction (PFC), SiC discrete and SP3/SP6LI module drive reference designs/boards, together with a range of SiC Spice models.
The 700, 1200 and 1700V SiC SBDs power modules are available for order.
The company’s SiC products are available in production volumes and there is a variety of die and package options for the SiC MOSFETs and SiC diodes.
Microchip Technology provides smart, connected and secure embedded control solutions. It says its development tools and comprehensive product portfolio enable customers to create optimal designs which reduce risk while lowering total system cost and time to market. The company’s customers are in the industrial, automotive, consumer, aerospace and defence, communications and computing markets.
