MOSFET addition claims industry-leading low on-resistance
The latest addition to the low voltage, U-MOS IX-H series of low-voltage N-channel power MOSFETs are 40 and 45V devices, which are claimed to deliver industry leading-class low on-resistance and high-speed performance. Toshiba has released nine 40V and five 45V versions, designed for industrial and consumer applications, including high-efficiency DC/DC converters, high-efficiency AC/DC converters, power supplies and motor drives.
They use the company’s low-voltage trench structure U-MOS IX-H process; depending on the device, maximum RDS(ON) (at VGS=10V) ranges from 0.80 to 7.5mΩ.
Output loss is improved by the reduction of output charge, which can contribute to higher system efficiency, says the company. The cell structures used are optimised to suppress spike voltage and ringing during switching, which can contribute to lowering system EMI.
The MOSFETs are offered in SOP-Advance 5.0 x 6.0mm and TSON-Advance 3.0 x 3.0mm packages. All of the new devices support 4.5V logic-level drives.