MOSFET lowers switching losses in telecomms
Resistance is reduced by 30 per cent, claims Vishay Siliconix, of its n-channel SiHP065N60E, fourth generation 600V E series power MOSFET.
The resistance figure is compared with previous 600V E series MOSFETs; gate charge is 44 per cent lower. According to the company, it offers the industry’s lowest gate charge times on-resistance.
The MOSFET addresses efficiency and power density improvements in the first stages of the power system architecture, power factor correction and subsequent high-voltage DC/DC converter blocks, says the company.
It is built on the company’s energy-efficient E series super-junction technology, and features low maximum on-resistance of 0.065Ohm at 10V and low gate charge down to 49nC. The device’s figure of merit of 2.8Ohm*nC is claimed to be 25 per cent lower than the closest competing MOSFET in the same class. For improved switching performance, the SiHP065N60E provides low effective output capacitances Co(er) and Co(tr) of 93 and 593pF, respectively. These values translate into reduced conduction and switching losses to save energy in power factor correction and hard-switched DC/DC converter topologies.
The MOSFET is offered in the TO-220AB package, and is RoHS-compliant, halogen-free, and designed to withstand overvoltage transients in the avalanche mode with guaranteed limits through 100 per cent UIS testing.