MOSFETs offer double-sided cooling
Extending its range of U-MOS IX-H MOSFETs with an n-channel device in a DSOP Advance, SMD package, the 60V TPW1R306PL has been released by Toshiba Electronics.
It offers double sided cooling and low typical on resistance (at VGS = 10V) of just 0.95mOhm. Maximum drain current and power dissipation are 260A and 170W respectively.
It is offered in a 5.0 x 6.0mm form factor. The enhanced thermal dissipation provided by the double-sided cooling will help to reduce device count and save space in high-component-density applications, says the company. The thermal resistance rating (Rth (ch-c) of 0.88k/W) to the top side of the package is significantly lower than that of competitor packages, it claims.
Typical QOSS is just 77.5nC, allowing designers to improve system performance and efficiency by raising switching speeds and reducing switching losses.
Target applications are DC/DC converters, secondary-side circuits of AC/DC power supplies and motor drives in cordless home appliances and power tools.
Toshiba will be at Embedded World (14 to 16 March) Hall 3A, stand 129