MOSFETs reduce EMI for robust operation

The first product from Fairchild Semiconductor, since its acquisition by ON Semiconductor, is the SuperFET III family of 650V N-channel MOSFETs. They meet the higher power density, system efficiency and reliability requirements of the latest telecomms, server, EV charger and solar products, says the company.

They are claimed to deliver best-in-class reliability, low EMI, “excellent efficiency and superior thermal performance”. They are also designed to reduce bill of material costs, save board space and simplify product design.

SuperFET III technology has the lowest Rds ON in any easy drive version of a Super Junction MOSFET. This is achieved using a charge balancing technology which also enables 44 per cent lower Rds ON than its SuperFET II predecessors, in the same package size.

A particular feature is single pulse Avalanche Energy (EAS) performance that is three times better than its closest competitor. The lower peak drain-source voltage during turn off improves system reliability in low temperature operation because the breakdown voltage naturally drops by 5 per cent at -25 degree C junction temperature than room temperature and the peak drain-source voltage becomes higher at low temperature.

The MOSFET family is available today in multiple package and parametric options.


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