MOSFETs reduce on-state resistance and reverse recovery charge
Expanding the OptiMOS 5 family, Infineon has introduced a 150V family, optimised for high performance applications which require low charges, high power density but also ruggedness.
They are claimed to contribute to a reduction in global CO 2 emissions, by enabling high efficiency designs and decrease power consumption of telecommunication equipment or increase the power and range of electric vehicles.
Compared to the next best alternative, the MOSFETs are claimed to offer a breakthrough reduction in on-state resistance RDS(on) of 25 per cent in a SuperSO8 package. With the same RDS(on) the FOM g of the family is improved by up to 29 per cent over the previous generation. Increased commutation ruggedness is provided by the low Q rr, which is 72 per cent lower than the next best alternative in SuperSO8, claims the company. The MOSETs also boast improved EMI behaviour.