Rad-hardened MOSFET family is enhanced for mission-critical space applications
Initial products from IR HiRel, an Infineon Technologies company, are radiation-hardenend MOSFETs based on the proprietary N-channel R9 technology. Compared to previous technologies it is offering size, weight and power improvements, says the company, which is significant in systems such as high-throughput satellites, where the cost-per-bit-ratio can be significantly reduced.
The 100V, 35A MOSFETs are suited to mission-critical applications requiring an operating life of 15 years and above. Target applications include space-grade DC-DC converters, intermediate bus converters, motor controllers and other high speed switching designs.
The IRHNJ9A7130 and IRHNJ9A3130 are fully characterised for total ionising dose (TID) immunity to radiation of 100 and 300kRads respectively. An RDS(on) of 25mOhm (typical) is 33 per cent lower than the previous device generation. In combination with increased drain current capability (35 as opposed to 22A), the MOSFETs are able to provide increased power density and reduced power losses in switching applications.
Other features are single event effect (SEE) immunity and MOSFETs have been characterised for useful performance with linear energy transfer (LET) up to 90MeV/(mg/cm²); at least 10 per cent higher than previous generations.
Both of the new devices are packaged in a hermetically sealed, lightweight, surface mount ceramic package (SMD-0.5) measuring 10.28 x 7.64 x 3.12mm. They are also available in bare die form.
Samples and production quantities are available.