RF transistors and pallets are based on Gen 9 LDOS process technology
RF power transistors and pallets were highlighted by Ampleon at European Microwave Week. They are based on the latest Gen 9 LDMOS process technology and are available with 50W drivers up to 400W finals, for use in S band radar for pulsed RF applications.
According to the company, the power density attributes of Gen 9 meet the specific needs of the aerospace and defence industry for size, weight, power, as well as cost and reliability (SWaP)
This process technology operates up to a VSWR 10:1. Power density and an optimised die design ensure that package size can be minimised. Devices are packaged in an SOT502 format measuring 20.6 x 9.8 x 4.1mm.
The modular RF power block pallet solutions, with dimensions 35 x 55mm, weigh 85g.
Samples can be ordered for the BLS9GXX transistor family and BPS9GXX S band pallets. Electrical models and test reports are available upon request.