Richardson RFPD adds Wolfspeed’s 1000V, 120mΩ SiC power MOSFET
The C3M0120100K silicon carbide power MOSFET from Wolfspeed, is now available from distributor, Richardson RFPD, with full support design capabilities.
The 1000V, 120mΩ C3M0120100K features Wolfspeed’s C3M SiC MOSFET technology and is available in an optimised four-lead TO-247-4 package with a separate driver source pin. It features 8.0mm of creepage distance between drain and source, high blocking voltage with low on-resistance, high-speed switching with low capacitances, and fast intrinsic diode with low reverse recovery (Qrr).
The C3M0120100K is optimised for renewable energy, electric vehicle (EV) battery charger, high-voltage DC/DC converter and switch-mode power supply applications.
Key features of the C3M0120100K include drain source voltage (Vds max) of 1000V, continuous drain current (Id) at 25 degree C of 22 A, Rds(on) of 120mΩ. The C3M0120100K also provides total gate charge (Qg) of 21.5nC and maximum junction temperature of 150 degreeC. Output capacitance (Coss) is 40pF, while reverse recovery charge (Qrr) is 154nC and reverse-recover time (Trr) is 16ns.
Wolfspeed is a Cree company. Richardson RFPD, an Arrow Electronics company, specialises in RF and wireless communications, power conversion and renewable energy markets. Its worldwide design centres and technical sales team provide comprehensive support for customers, from prototype to production.
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