Richardson RFPD introduces GaN RF transistors pair from Qorvo
Two GaN on SiC RF transistors from Qorvo have been added to the Richardson RFPD portfolio. The QPD1009 is a 15W, 50V device with an output power level of 17W at 2GHz, and a linear gain of 24dB at 2GHz. The 10W, 50V QPD1010 features an output power of 11W at 2GHz and a linear gain of 24.7dB at 2GHz. Both operate from DC to 4GHz.
Designed for wideband defence and commercial radar, communications and avionics, the QPD1009 and QPD1010 offer significant operational and system cost savings by achieving greater system-level efficiency and are available in low-cost 3.0 x 3.0mm plastic QFN packages, says the company.
Evaluation boards, the QPD1009-EB and QPD1010-EB are also available.