Richardson RFPD introduces Peregrine 33MHz UltraCMOS FET driver

Distributor, Richardson RFPD, has introduced availability and design support for the UltraCMOS FET driver from Peregrine Semiconductor.

The PE29100, integrated high-speed driver is designed to control the gates of external power devices, such as GaN Systems’ E-HEMT (enhancement-mode high electron mobility transistor) gallium nitride (GaN) FETs. Outputs are capable of providing switching transition speeds in the sub-nanosecond range for hard switching applications up to 33MHz.

High switching speeds result in smaller peripheral components, says the company, and enable new applications like wireless charging with the Rezence wireless power transfer standard from A4WP (now part of the AirFuel Alliance).

The driver is manufactured on the patented SoI (silicon in insulator) UltraCMOS process technology, on a sapphire substrate. This, says the company, offers the performance of GaAs with the economy and integration of conventional CMOS.

The driver is supplied in a flip-chip package, and offering sub-nano sceodn rise and fall times, with a fast propagation delay of eight nano seconds.


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