Rutronik offers Vishay’s dual asymmetric MOSFETs
Claimed to be the industry’s first AEC-Q101-qualified 12 and 20V MOSFETs in a dual asymmetric package, Rutronik has added the Vishay Siliconix SQJ202EP and SQJ200EP n-channel TrenchFETs. They are optimised for high-side and low-side synchronous buck applications.
They combine a smaller high-side MOSFET for faster switching and a larger low-side MOSFET for lower on-resistance in a compact 5.0 x6.0mm PowerPAK SO-8L dual asymmetric package. According to the distributor, they provide high-performance alternatives to standard dual devices, restricting the optimum combination of MOSFETs for high-current, high-frequency buck designs. Compared to using discrete components, the devices occupy less board space and can facilitate more compact PCB layouts.
The SQJ202EP is suitable for applications with bus voltages up to 8.0V and offers extremely low maximum on-resistance down to 3.3mOhm at VGS is 10V for the channel two low-side MOSFET.
For applications with higher bus voltages, the 20V SQJ200EP features a slightly higher maximum on-resistance of 3.7mOhm. Both devices offer high-temperature operation to +17 degree C to provide ruggedness and reliability for automotive synchronous buck applications, including infotainment, telematics, navigation and LED lighting. The MOSFETs are 100% tested for gate resistance and avalanche.