Samsung breaks Tbyte threshold for smartphone storage
Samsung announces what is believed to be the industry’s first 1Tbyte embedded Universal Flash Storage (eUFS). The storage for mobile applications is powered by Samsung’s fifth-generation V-NAND.
The eUFS offers 20 times more storage than a 64Gbyte internal memory and 10 times the speed of a typical microSD card for data-intensive applications.
The eUFS 2.1 is for use in next-generation mobile applications and is introduced four years after the company introduced the 128Gbyte eUFS. With this introduction, smartphones will be able to offer storage capacity comparable to a premium notebook PC, without having to be paired with additional memory cards.
It is offered in the same package size (11.5 x 13.0mm while doubling the capacity of the previous 512Gbyte version by combining 16 stacked layers of Samsung’s advanced 512Gbit V-NAND flash memory and a newly developed proprietary controller. Smartphone users will be able to store 260 10-minute videos in 4K UHD (3840 x 2160) format, whereas the 64Gyte eUFS that are widely used in many high-end smartphones today can store 13 videos of the same size.
The 1TB eUFS allows users to transfer large amounts of multimedia content in significantly reduced time. At up to 1,000Mbytes per second, the eUFS 2.1 features approximately twice the sequential read speed of a typical 2.5-inch SATA solid state drive (SSD). Hence the 5Gbyte-sized full HD videos can be offloaded to an NVMe SSD in as little as five seconds, which is 10 times the speed of a typical microSD card. The random read speed has increased by up to 38 per cent over the 512Gbyte version, achieving up to 58,000 I/O operations per second (IOPS). Random writes are 500 times faster than a high-performance microSD card which delivers 100 IOPS, at up to 50,000 IOPS. The random speeds allow for high-speed continuous shooting at 960 frames per second for multi-camera capabilities in smartphones.
