SDRAM has power consumption to optimise battery life in mobiles

Designed to extend battery life in compact portable devices, the AS4C512M32MD3, is a high-speed CMOS mobile low-power DDR3 (LPDDR3) SDRAM from Alliance Memory. It has low voltage operation of 1.2/1.8V and is offered in the 11.0 x 11.5mm 178-ball FBGA package.

To meet the demand for more functionality in less space and using less power, in, for example, smartphones, tablets, and virtual and augmented reality (VR and AR) headsets, the LPDDR3 device has auto temperature-compensated self-refresh (TCSR) to minimise power consumption at lower ambient temperatures. A partial-array self-refresh (PASR) feature reduces power by only refreshing critical data, and a deep power down (DPD) mode provides a low power state when data retention is not required.

Manufactured using a 20nm process, the AS4C512M32MD3 is internally configured as eight banks x 32Mbit x 32. It offers high-speed operation with a clock frequency of 667MHz and data rate of 1333Mbit/s. It operates at an extended commercial temperature range of -25 to +85 degree C. The AS4C512M32MD3 SDRAM offers fully synchronous operation and programmable read or write burst lengths of four, eight, or 16. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh. The RoHS-compliant device is lead (Pb)- and halogen-free.


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