STMicroelectronics claims DK5 MOSFETs maximise power conversion topologies
STMicroelectronics has announced the latest MDmesh DK5 power (metal–oxide–semiconductor field-effect transistor) MOSFETs. It describes them as very high-voltage, super-junction transistors, with a fast-recovery diode. According to STMicroelectronics, this allows designers to maximise the efficiency of various power-conversion topologies including LLC resonant converters with zero-voltage switching (ZVS).
The super-junction MOSFETS are available in ratings from 950 to 1050V. STMIcroelectrtonics says the MDmesh DK5 MOSFETs deliver superior switching performance with lower on-resistance (RDS(ON)) and higher current rating per die area compared to ordinary planar MOSFETs. They enable designers to enhance efficiency, and increase power density by using fewer parallel components, in converters for high-power equipment such as telecomms and data centre servers powered from high bus voltages, industrial welders, plasma generators, high-frequency induction heaters, and X-ray machines.
With the fast-recovery body diode, the DK MOSFETs enable higher efficiency in ZVS LLC resonant converters, which are chosen for applications that require high efficiency over a wide input voltage range. Other types of bridged converters, as well as boost DC/DC converters for battery charging, also benefit from the reduced losses and enhanced dynamic performance of these devices. Compared with currently available VHV fast-diode MOSFETs, the DK5 devices combine the best reverse-recovery time (trr) and lowest MOSFET gate charge (Qg) and RDS(ON), says STMicroelectronics, with the favorable output and input capacitances (Coss, Ciss) of a super-junction device.
The DK5 family extends STMicroelectronics’ very high voltage (VHV) super-junction portfolio, which includes devices from 800 to 1500V, adding six new parts in TO-247, TO-247 long-lead, Max247, and ISOTOP power packages. Volume production has already started for the STWA40N95DK5, STY50N105DK5, and STW40N95DK5.
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