Super-junction MOSFETs enhance flyback converters

Designed to enhance the power and efficiency of flyback converters, the 900V DMesh K5 super-junction MOSFETs deliver best in class RDS (ON) and dynamic characteristics, says STMicroelectronics.

The series contains the first 900V MOSFETs with RDS (ON) below 100mOhm, and, according to STMicroelectronics, gives the industry’s best RDS (ON) among DPAK devices. The DMesh K5 super-junction MOSFET are also claimed to be the industry’s lowest gate charge (Qg), to ensure faster switching for greater flexibility where a wide input-voltage range is required. They can be used for flyback converters including standard, quasi-resonant, and active-clamp designs covering power ratings from 35 to 230W or higher. Low input and output capacitances (Ciss, Coss) enable zero-voltage switching with minimal energy loss in half-bridge LLC resonant converters.

The increased safety margin and superior static and dynamic behavior of the 900V DMesh K5 MOSFETs enable designers to improve the performance of server power supplies, three-phase switched-mode power supplies (SMPS), LED lighting supplies, electric vehicle (EV) chargers, solar generators, welders, industrial drives, and factory automation.

STMicroelectronics’ family of MDmesh K5 super-junction transistors now offers numerous choices at voltage ratings of 800, 850, 900, 950, 1050, 1200, and 1500V. Packaging options include TO-220AB, TO-220FP, TO-247, TO-247 Long Lead, IPAK and I2PAK, as well as D2PAK and DPAK surface-mount power packages.

ST is a global semiconductor company, headquartered in Geneva, Switzerland,  with net revenues of US$ 6.97 billion in 2016. Offering one of the industry’s broadest product portfolios, ST serves customers across the spectrum of electronics applications with innovative semiconductor solutions for Smart Driving and the Internet of Things. 

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http://www.st.com/mdmeshk5

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