Superjunction MOSFETs’ switching surpasses the rest, says ON Semiconductor
Superjunction MOSFETs introduced by ON Semiconductor deliver better switching performance than other Superjunction MOSFETs on the market, claims the company. The 650V SuperFET III Fast superjunction MOSFETs are also claimed to have improved efficiency and higher system reliability.
The superjunction MOSFETs are suitable for use in 5G applications, electric vehicle charging stations as well as telecomms and server equipment. Efficiency and reliability are increasing important in power applications, to ensure manufacturers can meet more stringent international standards, adds ON Semiconductor.
The company has also developed automotive AECQ101 and industrial grade qualified 1,200 V SiC diodes. The NVDSH20120C, NDSH20120C, NVDSH50120C, and NDSH50120C can also be used in electric vehicle charging stations, but also for on-board chargers and DC/DC converters in electric vehicles. Other applications are solar inverters and uninterruptible power supplies. SiC diodes offer significant advantages over silicon solutions, says ON Semiconductor, namely higher reliability, lower EMI and simpler cooling requirements. The design of the SiC dioides improves on the first generation in terms of a smaller die size and lower capacitance. The NVDSH20120C, NDSH20120C, NVDSH50120C, and NDSH50120C deliver a lower forward voltage drop and a four-fold increase in rated current, with a higher rate of change (di/dt) of 3,500A per micro second. The smaller die size also returns a 20 per cent lower thermal resistance in an F2 package.
ON Semiconductor provides power, analogue, sensor and connectivity products for engineers working in the automotive, industrial, cloud power and Internet of Things (IoT) sectors.
ON Semiconductor is headquartered in Phoenix, Arizona, USA, with a global network of manufacturing facilities, sales and marketing offices and engineering centres in its key markets.
