Three n-channel devices in compact PowerPAK SO-8L package

Three new n-channel devices in a compact PowerPAK SO-8L package have been added to Vishay Intertechnology’s 600V and 650 V E series power MOSFETs.

Providing space-saving alternatives to MOSFETs in the TO-252 (DPAK) package, the Siliconix 600 V SiHJ8N60E and 650 V SiHJ6N65E and SiHJ7N65E provide reduced package inductance for lighting, industrial, telecom, computing, and consumer applications.

The devices are fully RoHS-compliant, halogen-free, and lead (Pb)-free. Measuring 5 mm by 6 mm, the SiHJ8N60E, SiHJ6N65E, and SiHJ7N65E occupy only half the board space, with half the height, of devices in the TO-252 (DPAK) package. The gullwing lead construction of the PowerPAK SO-8L can offer improved board-level reliability when subjected to temperature cycling over the lifetime of the equipment.

Built on the company’s E Series superjunction technology, the SiHJ8N60E, SiHJ6N65E, and SiHJ7N65E feature low maximum on-resistance down to 0.52Ohm at 10 V, ultra-low gate charge down to 17 nC, and low gate charge times on-resistance, a key figure of merit (FOM) for MOSFETs used in power conversion applications.

These values translate into low conduction and switching losses to save energy in power factor correction, flyback and two-switch forward converters, and hard-switched topologies for HID and LED lighting, and industrial, telecom, consumer, and computing power adapters.

The MOSFETs are designed to withstand high energy pulses in the avalanche and commutation modes with guaranteed limits through 100 per cent UIS testing.


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