Toshiba adds four 650V super junction MOSFETs
Four N-channel super junction 650V power MOSFETs have been added to the DTMOSVI series by Toshiba Electronics Europe. They are suitable for industrial and lighting power supply applications and anywhere which requires efficiency in a small form factor, says Toshiba.
The TK090E65Z, TK110E65Z, TK155E65Z, and TK190E65Z MOSFETs achieve a 40 per cent reduction in the drain source on resistance (RDS(on)) x gate drain charge (Qgd) figure of merit (FoM) compared to the previous generation of DTMOS devices. This will translate into “a substantial decrease in switching losses over earlier devices,” to increase efficiency in end products. The performance enhancement will apply to new designs as well as upgrades of existing designs.
All four of the new MOSFETs offer a drain source voltage (VDSS) of 650V with a drain current (ID) capability up to 30A. Drain source RDS(on) is as low as 0.09 Ohm and the gate drain charge (Qgd) can be as low as 7.1 nC, allowing low loss operation at high speeds. All four MOSFETs are packaged in industry-standard TO-220 through-hole packages.
Toshiba says it will continue to expand its product line up to meet market trends and help improve the efficiency of power supplies.
Toshiba Electronics Europe (TEE) is the European electronic components business of Toshiba Electronic Devices and Storage. TEE offers European consumers and businesses a variety of innovative hard disk drive (HDD) products plus semiconductors for automotive, industrial, IoT, motion control, telecomms, networking, consumer and white goods applications.
The company’s portfolio also encompasses power semiconductors and other discrete devices ranging from diodes to logic ICs, optical semiconductors as well as microcontrollers and application specific standard products (ASSPs).
TEE has headquarters in Düsseldorf, Germany, with branch offices in France, Italy, Spain, Sweden and the United Kingdom providing marketing, sales and logistics services.
