Vincotech releases six IGBT M7-powered modules
Six families, powered by insulated gate bipolar transistor (IGBT) M7 chips have been announced by Vincotech.
Vincotech announced the sixpack, PIM and half-bridge topology-based modules, claiming that they deliver the dual benefits of superior performance and multiple sourcing to minimise customers’ supply chain risks.
The IGBT M7 (7th-gen Mitsubishi) chips are based on ultra-thin wafer processing technology and optimised cell design, says Vincotech. The modules achieve very low VCEsat to reduce static losses by 20 per cent. The new relaxed field of cathode (RFC) diodes and suppressed snap-off recovery, are designed for engineers to find it far easier to optimise the inverter’s electromagnetic compatibility (EMC) and cut overall system costs, says the company. The IGBT M7 chips are housed in the industry-standard flow, MiniSKiiP and the new VINco E3 packages.
These modules are designed to enable manufacturers in the motion control market to develop flexible, scalable inverter designs. This initial release is for 1200V applications with a power range of 75 to 690A.
Vincotech said that modules for currents ranging below 75A will soon be announced.
Sample modules may be sourced on demand from Vinoctech’s usual channels.
Vincotech designs and builds premium-quality semiconductor power modules for motion control, renewable energy and power supply applications, both off-the-shelf and custom products. It is an independently operating affiliate of Mitsubishi Electric Corporation, staffed with around 500 people worldwide.
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