Vishay uses MPS design for Gen 3 650V SiC Schottky diodes
MPS (merged pin Schottky) design has been used by Vishay Intertechnology for its Gen 3 650V SiC Schottky diodes. The company has increased 17 Schottky diodes. They combine high surge current robustness with low forward voltage drop, capacitive charge, and reverse leakage current to increase efficiency and reliability in switching power designs.
The SiC diodes released today consist of 4.0 to 40A devices in the TO-22OAC 2L and TO-247AD 3L through-hole and D²PAK 2L (TO-263AB 2L) surface mount packages. Their MPS structure reduces their forward voltage drop by 0.3V compared to earlier devices, while their forward voltage drop times capacitive charge (a key figure of merit or FOM for power efficiency) is 17 per cent lower.
The diodes’ typical reverse leakage current is 30 per cent lower at room temperature and 70 per cent lower at high temperature than the closest competing solution, said Vishay. This reduces conduction losses to ensure high system efficiency during light loads and idling. Unlike ultrafast diodes, the Gen 3 devices have virtually no recovery tail, which further improves efficiency.
Compared to silicon diodes with comparable breakdown voltages, the SiC devices offer higher thermal conductivity, lower reverse current, and shorter reverse recovery times. The diodes’ reverse recovery times are nearly temperature-independent, enabling operation at higher temperatures to +175 degrees C without the shifts in power efficiency caused by switching losses.
Typical applications for the VS-3Cxx-M3 SiC diodes will include AC/DC PFC and DC/DC high frequency output rectification in FBPS and LLC converters for energy generation and exploration applications. Offering high reliability, the RoHS-compliant and halogen-free diodes have passed higher temperature reverse bias testing of 2,000 hours and temperature cycling testing of 2,000 thermal cycles. This is double the testing hours and cycles of AEC-Q101 requirements.
Samples and production quantities of the new SiC diodes are available now, with lead times of eight weeks.
Vishay manufactures a large portfolio of discrete semiconductors and passive electronic components for innovative designs in the automotive, industrial, computing, consumer, telecommunications, military, aerospace and medical markets.
