World’s first GaN ICs aim to accelerate market adoption

Navitas Semiconductor has announced the immediate availability of production qualified iDrive Gallium Nitride (GaN) Power ICs using the company’s proprietary AllGaN technology.

The NV6131, NV6105 and NV6115 offer a high-efficiency 650V, 160mOhm power FET, integrating digital and analogue circuits, resulting in what the company decribes as ground breaking speed, energy efficiency, power density and reduced system cost.

As a technology, GaN can enable up to 100x higher frequencies than silicon but driving, controlling and protecting the high-speed power devices has proved an industry challenge. By integrating the critical digital and analogue circuits monolithically with the GaN power device, the company claims that these system level problems have been eliminated. The GaN Power ICs with iDrive guarantee a 10 to 100x increase in system operating frequency, combined with higher efficiencies to enable up to a five-fold increase in power densities and 20 per cent lower system

CEO Gene Sheridan explains: “By integrating all gate-drive-related circuitry, virtually all frequency-related power losses are eliminated, opening the door to significant frequency and efficiency gains. We anticipate a major upgrade cycle in mobile fast chargers, thin TVs, high-efficiency data centres, LED lighting, solar and electric vehicle markets as this new high-speed revolution in power electronics gets underway”.

The NV6131, NV6105 and NV6115 are available now in 5.0 x 6.0mm QFN packages.

The ICs will be demonstrated at the Applied Power Electronics Conference (APEC), March 27-29 in Tampa, Florida.

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