1200V and 650V IGBTs are designed for PTC heaters of EVs
Magnachip Semiconductor has launched 1200V and 650V IGBTs (insulated gate bipolar transistors) designed for PTC (positive temperature co-efficient) heaters of electric vehicles (EVs).
The AMBQ40T120RFRTH (1200V) and AMBQ40T65PHRTH (650V) IGBTs are built on Magnachip’s Field Stop Trench technology and offer a minimum short-circuit withstand time of 10 microseconds. The level of ruggedness enables PTC heaters to be protected from a permanent failure in the event of overcurrent conditions, said Magnachip.
The thick and large heatsink of the TO-247 package optimises IGBTs heat dissipation, making them suitable for high power and efficiency operations, such as both the upper and lower sides of power management integrated circuits (PMICs) of PTC heaters.
The AMBQ40T120RFRTH and AMBQ40T65PHRTH are AEC-Q101-qualified and available in a TO247 package.
Magnachip Semiconductor is a designer and manufacturer of analogue and mixed-signal semiconductors for communications, IoT, consumer, computing, industrial and automotive applications. The company also provides a range of standard products and has more than 40 years of operating history. It owns a portfolio of approximately 1,100 registered patents and pending applications, and has extensive engineering, design and manufacturing process expertise.
