SiC MOSFET gate driver improves isolation capability
Claimed to deliver the highest peak output gate current available without an external boost stage, the SIC1182K Scale-iDriver SiC-MOSFET is the latest gate driver from Power Integrations.
The single-channel SiC MOSFET gate driver can be configured to support different gate-drive voltage requirements matching the range of requirements seen in SiC MOSFETs today, adds Power Integrations.
The SIC1182K offers up to 8.0A output at a junction temperature of 125 degrees C allowing it to support SiC-MOSFET inverter designs up to several hundred kW without a booster stage. As well as high system efficiency, this enables customers to produce only one design to cover their entire product portfolio of differently-rated power inverters, points out Power Integrations. A switching frequency of up to 150kHz supports multiple applications.
The Scale-iDriver SIC1182K SiC gate driver features Power Integrations’ high speed communications FluxLink technology, which replaces optocouplers and capacitive or silicon-based solutions, significantly improving reliability in signal transmission, claims Power Integration, and delivering reinforced isolation up to 1200V. All Scale-iDriver devices include system-critical protection features such as desaturation monitoring and current SENSE read out, primary and secondary under-voltage lock-out (UVLO) and advanced active clamping (AAC). Protection circuits provide safe shut down within five microseconds, meeting the fast protection needs of SiC devices. The SIC1182K SiC gate drivers exhibit high external magnetic field immunity, and have a package that provides 9.5 mm or less of creepage and clearance, using material that has the highest CTI level, CTI600, to IEC60112.
Key applications include uninterruptible power supplies, photovoltaic systems, servo drives, welding inverters and power supplies.
Scale-iDriver technology minimises the number of external components that are needed and reduces the bill of material, explains Power Integrations. Tantalum or electrolytic capacitors are not required and only one secondary winding is needed. A two-layer-PCB can be used which increases design simplicity, cuts component count and eases supply chain management.
Power Integrations’ Scale-iDriver SIC1182K SiC gate drivers meet IEC60664-1 isolation coordination for low voltage equipment below 1000V and IEC61800-5-1 electric motor drive inverter regulations. UL 1577, 5 kV AC for one minute, is pending and VDE0884-10 is in process.
