Infineon adds to SiC offering with 650V MOSFET
Infineon Technologies has announced another addition to its silicon carbide (SiC) product portfolio with the CoolSiC 650V MOSFETs. The company explains that the MOSFETs address a growing demand for energy efficiency, power density, and robustness in a range of applications, including servers, telecomms and industrial switch mode power supplies (SMPS), solar energy systems, energy storage and battery formation, uninterruptible power supplies (UPS), motor drives and electric vehicle (EV) charging.
The CoolSiC MOSFET 650V devices are rated from 27 to 107 mOhm. They are available in classic TO-247 3-pin as well as TO-247 4-pin packages, which allows for even lower switching losses, assures Infineon. The MOSFETs, like the company’s earlier CoolSiC MOSFET products, are based on Infineon’s trench semiconductor technology. They maximise the strong physical characteristics of SiC for reliability, best-in-class switching and conduction losses. Additionally, claims Infineon, they feature highest trans conductance level (gain), threshold voltage (Vth) of 4V and short-circuit robustness. Thus, trench technology allows for low losses in the application and high reliability in operation, says the company.
The 650V CoolSiC MOSFETs offer switching efficiency at higher frequencies in comparison to other silicon and silicon carbide solutions available today. They are also reliable and with very a low on-state resistance (RDSon) dependency on temperature to contribute to thermal performance. The devices boast robust and stable body diodes retaining a very low level of reverse recovery charge (Qrr), which is approximately 80 per cent less compared to the best superjunction CoolMOS MOSFET. The commutation-robustness helps achieve an overall system efficiency of 98 per cent, through the use of continuous conduction mode totem-pole power factor correction (PFC), Infineon explains.
For use with CoolSiC MOSFETs 650V devices, Infineon offers dedicated one-channel and two-channel galvanically isolated EiceDriver gate-driver ICs. This combines CoolSiC switches and dedicated gate-driver ICs to help lowering system costs as well as total cost of ownership. It is also claimed to enable energy efficiency gains. The CoolSiC MOSFETs also work seamlessly with other ICs from Infineon’s EiceDriver gate driver family.
The CoolSiC MOSFET 650V family comprises eight variants housed in two through hole TO-247 packages. They are available for order now. Three dedicated gate-driver ICs will be available from March 2020.
