Infineon announces CoolMOS S7 super junction MOSFET for low frequencies
Designed for power density and energy efficiency for applications where MOSFETs are switched at a low frequency, the 600V CoolMOS S7 family is characterised by optimisation for conduction performance, improved thermal resistance and high-pulse current capability, says Infineon.
Intended applications are active bridge rectification, inverter stages, PLCs, power solid-state relay and solid-state circuit breakers. The 10 mOhm CoolMOS S7 MOSFET is claimed to be the industry’s smallest RDS(on) device.
The CoolMOS S7 family has been developed to minimise conduction losses and ensure the fastest response time with increased efficiency for low-frequency switching applications. They deliver lower RDS(on) x A compared to CoolMOS 7 products to trade off switching losses for lower on-resistance and lower cost.
The CoolMOS S7 products fit the 10 mOhm chip into a top side cooled QDPAK and the 22 mOhm chip is supplied in a small TO-leadless (TOLL) surface mount package. For cost-effective, simple, compact and modular high-efficiency designs, systems can meet regulations and energy efficiency certification standards (i.e. Titanium for SMPS) as well as meet power budgets and reduce part count, heat sinks and total cost of ownership, adds Infineon.
The 22 mOhm 600 V CoolMOS S7 device is available in TO-leadless and TO-220, the 40 mOhm and 65 mOhm devices are available in TO-leadless packages. The 10 mOhm CoolMOS S7 MOSFET will be held in stock in Q4 2020.
