Two 80V n-channel power MOSFETs address low-loss operation

Two 80V n-channel MOSFETs from Toshiba Electronics Europe are based on the company’s U-MOSX-H process. The TPH2R408QM and TPN19008QM are intended a range of power applications where low-loss operation is important, including high efficiency AC/DC and DC/DC conversion in data centres and communication base stations as well as a range of motor drive equipment.

Both the TPH2R408QM and TPN19008QM are 80V U-MOSX-H devices that exhibit a reduction of around 40 per cent in drain-source on-resistance (RDS(on)) compared to corresponding 80V products in earlier processes such as U-MOSVIII-H, reports Toshiba. The TPN19008QM has an RDS(on) of 19mOhm (max) and the TPH2R408QM has and RDS(on) of 2.43mOhm.

Toshiba reports that optimising the device structure has improved the trade-off between RDS(on) and gate charge characteristics by up to 15 per cent and the trade-off between RDS(on) and output charge by 31 per cent. As a result, both the TPH2R408QM and TPN19008QM are claimed to have the lowest power dissipation in the industry.

Both MOSFETs are housed in surface mount packages and rated for a drain-source voltage (VDSS) of 80V. They can operate at channel temperatures (Tch) up to 175 degrees C. The TPN19008QM is rated for a drain current (ID) of 34A and is housed in a 3.3 x 3.3mm TSON package. The TPH2R408QM is rated for an ID of 120A and housed in a 5.0 x 6.0mm SOP.

The MOSFETs are shipping now.

https://toshiba.semicon-storage.com