Infineon introduces SiC power modules for EVs
Qualified to the AQG324 standard, Infineon’s latest EasyPack module integrates the company’s CoolSiC automotive MOSFET technology. The standard was developed by the German car industry to define a procedure for characterising environmental and lifetime testing of power electronics modules for electric vehicles (EVs).
Silicon carbide (SiC) is efficient in EVs, particularly those using an 800V or above battery system, leading to higher efficiency in inverters and therefore longer range or lower battery costs.
Introducing CoolSiC automotive MOSFET technology into the EasyPack, with full automotive qualification, Infineon expands the range of applications for the module family to now include high voltage applications in EVs, such as HV/HV-DC/DC step-up converters, multi-phase inverters and fast-switching auxiliary drives such as compressors for fuel cells.
The module is based on Infineon’s SiC trench MOSFET structure. Compared to planar structures, the trench structure enables a higher cell density, resulting in the best-in-class figure of merit, according to Infineon. The trench MOSFETs can therefore be operated at lower gate-oxide field strengths, for higher reliability.
First-generation CoolSiC automotive MOSFET technology is optimised for use in traction inverters, where it achieves low conduction losses, especially under partial load conditions. Combined with the low switching losses of SiC MOSFETs, this enables losses in inverter operation to be reduced by around 60 per cent compared to silicon IGBTs, reports Infineon.
Infineon develops and tests CoolSiC automotive MOSFETs for short circuit, cosmic ray, and gate-oxide robustness.
The EasyPack CoolSiC Automotive MOSFET module FF08MR12W1MA1_B11A is in production now and will be available at distributors, from September 2020.
Infineon will take part in PCIM Europe 2020, a virtual event from 7 to 8 July. Register to attend PCIM Europe at www.pcim.mesago.com/
