Calculator simplifies power analysis for SiC FET and Schottky diode selection
An online power design tool by UnitedSiC identifies optimal SiC FETs for a design and streamlines the SiC FET and Schottky diode selections process with analysis of power-related results. The FET-Jet Calculator v2 is an enhancement of the original version launched in March.
The registration-free online tool provides comparison of performance for devices in different power applications and 26 topologies. The FET-Jet Calculator now supports an even wider range of power applications, says the company. It is designed to be used by anyone looking to work with SiC for the first time as well as experienced designers seeking the best SiC device to suit a design.
Enhancements to the Calculator include an instant bar chart displaying losses and efficiency data for UnitedSiC devices. They can address AC/DC, DC/DC and DC/DC power designs and the Calculator also shows optimal gate drive and snubber recommendations. Once the preferred SiC solution is defined, all I/O design information can be downloaded in pdf form.
Users can select the application function and topology and enter the design parameter details for the tool to automatically calculate switch current, efficiency, and losses, categorised by conduction, turn-on, and turn-off contributions.
All UnitedSiC FETs and Schottky diodes can be selected from sortable tables including the latest Gen 4 750V devices. The tool also warns if a selection is not suitable.
The updates to the FET-Jet Calculator have been introduced to remove barriers that prevent designers switching to SiC devices in the power design. Anup Bhalla, vice president of Engineering at UnitedSiC, commented: “The purpose of the FET-Jet Calculator has always been to make selecting the right device in the right power topology as easy as possible. . . An intuitive [user interface] that simply and instantly displays the most vital performance data speeds up R&D by quickly discounting inappropriate devices,” he explained.
